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2SK2892-01R
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
5,5m
90A
100W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 90 350 16 1728.5 100 150 -55 ~ +150
L=0.285mH,Vcc=12V
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=50A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C
Min. 30 1,0
Typ. 1,5 10 0,2 10 7,0 4,4 70 3900 2000 850 17 70 250 180 1,0 65 0,12
Max. 2,0 500 1,0 100 9,5 5,5 5850 3000 1280 30 110 380 270 1,5
35
90
Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
R R
th(ch-c) th(ch-a)
Symbol channel to case channel to ambient
Min.
Typ.
Max. 1,25 30,0
Unit C/W C/W
N-channel MOS-FET
30V
2SK2892-01R
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=50A; VGS=10V
5,5m 90A
100W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) [m]
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=100A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Eas=f(starting Tch): VCC=24V; IAV 45A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Transient Thermal impedance
EAV [mJ]
10
ID [A]
12
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
30V
2SK2892-01R
FAP-IIIB Series
Typical Switching Characteristics
t=f(ID): VCC =15V, VGS = 10V, RG = 10
5,5m 90A
100W
> Characteristics
t [ns]
VSD [V]
Power Dissipation PD=f(TC)
125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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